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SiGe Nanostructures with Ge Quantum Dots for Optoelectronic Applications_1

Research Area: Volume 2 Issue 2 Year: 2014
Type of Publication: Article Keywords: SiGe nanostructure, Ge quantum dots QD, photoluminescence, internal strain
  • F. Mofidnakhaei
  • Ch. Mohammadizadeh
  • N. Refahati
Journal: IJNIST Volume: 2
Number: 2 Pages: 130-134
Month: July-Dec
ISSN: 2321-0468
A study of technological parameters of growing of SiGe like number of Genano layers, layers thickness and temperature of substrate are reported. These parameters play an important role in the optical properties of SiGenanostructures with Ge quantum dots. A long lifetime of radiative recombination for band-to-band transition is attributed to indirect band in Si. As a consequence, the dominant recombination at deep level defects is non-radiative. In order to enhance the intensity of luminescence band at 0.8 eV that related to radiative recombination of Ge quantum dots, the hydrogen plasma ion treatment of SiGe nanostructure were utilized. Improving of the luminescence intensity is an important parameter to increase the quantum efficiency of optoelectronic devices based on the Si nanolayer with Ge quantum dots.
Full text: 2219.pdf


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